N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VQS Rated at ±20 V ? Silicon Gate for Fast Switching Sp

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FAIRCHILD

仙童半導(dǎo)體

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

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FAIRCHILD

仙童半導(dǎo)體

PowerMOS transistor Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRF730 is supplied in

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PHI

PHI

5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

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INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

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VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC convert

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A-POWER

富鼎先進(jìn)電子

TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

Description Designed to withstand high energy in the avalanche mode and switch efficiently. Also offer a drain-to-source diode with fast recovery time. Designed for high voltage, high speed applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy cap

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DCCOM

道全

6.0A 400V N CHANNEL POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. FEATURES ◆ Higher Current Rating ◆ Lower rDS(ON), Lower Capacitances ◆ Lower Total Gate Charge ◆ Tighter VSD Sp

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FCI

富加宜

SMPS MOSFET

SMPS MOSFET Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptable Power Supply ● High speed power switching Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and

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IRF