| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>IRF7301；Package：SOP-8；Generation V Technology Features VDS (V) = 20V RDS(ON) 文件：461.64 Kbytes 頁數(shù)：7 Pages | UMW 友臺半導體 | UMW | ||
絲?。?strong>IRF7301；Package：SOP-8；MOSFET Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements,multiple devices can be used in an application with dramatically reduced board spa 文件：409.28 Kbytes 頁數(shù)：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲?。?strong>IRF7301；Package：SOP-8；MOSFET Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements,multiple devices can be used in an application with dramatically reduced board spa 文件：409.28 Kbytes 頁數(shù)：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲?。?strong>IRF7301；Package：SOP-8；Generation V Technology Features VDS (V) = 20V RDS(ON) 文件：461.64 Kbytes 頁數(shù)：7 Pages | UMW 友臺半導體 | UMW | ||
IRF7301 | Power MOSFET(Vdss=20V, Rds(on)=0.050ohm) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：113.75 Kbytes 頁數(shù)：9 Pages | IRF | IRF | |
IRF7301 | MOSFET Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements,multiple devices can be used in an application with dramatically reduced board spa 文件：409.28 Kbytes 頁數(shù)：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：237.6 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Dual N-Channel 20-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC 文件：1.08868 Mbytes 頁數(shù)：7 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
GENERATION V TECHNOLOGY 文件：243.16 Kbytes 頁數(shù)：9 Pages | IRF | IRF |
詳細參數(shù)
- 型號：
IRF7301
- 制造商：
International Rectifier
- 功能描述：
Trans MOSFET N-CH 20V 5.2A 8-Pin SOIC T/R
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
SOP |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應,支持實單! |
詢價 | ||
UMW 友臺 |
23+ |
SOP-8 |
21000 |
原裝正品，實單請聯(lián)系 |
詢價 | ||
IR |
2021+ |
SO-8 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+/25+ |
4000 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
IR |
25+ |
SMD8 |
2962 |
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙ |
詢價 | ||
IR |
06+ |
原廠原裝 |
58 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
IOR |
09+ |
SOP8 |
5500 |
原裝無鉛,優(yōu)勢熱賣 |
詢價 | ||
IR |
25+ |
SOP-8 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IR |
23+ |
SOP8 |
5000 |
原裝正品,假一罰十 |
詢價 |
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