Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：113.75 Kbytes 頁數(shù)：9 Pages

IRF

MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements,multiple devices can be used in an application with dramatically reduced board spa

文件：409.28 Kbytes 頁數(shù)：7 Pages

EVVOSEMI

翊歐

絲印：IRF7301；Package：SOP-8；MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements,multiple devices can be used in an application with dramatically reduced board spa

文件：409.28 Kbytes 頁數(shù)：7 Pages

EVVOSEMI

翊歐

絲?。?strong>IRF7301；Package：SOP-8；Generation V Technology

Features VDS (V) = 20V RDS(ON)

文件：461.64 Kbytes 頁數(shù)：7 Pages

UMW

友臺半導體

20V 雙 N 通道 HEXFET Power MOSFET, 采用 SO-8 封裝

\n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 動態(tài)的dv/dt額定值\n? 快速開關\n? 雙 N 通道 MOSFET;

Infineon

英飛凌

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：237.6 Kbytes 頁數(shù)：9 Pages

IRF

Dual N-Channel 20-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC

文件：1.08868 Mbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導體

GENERATION V TECHNOLOGY

文件：243.16 Kbytes 頁數(shù)：9 Pages

IRF