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          首頁 >絲印反查>IRF7311

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF7311

          絲印:IRF7311;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

          General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

          文件:2.087889 Mbytes 頁數(shù):6 Pages

          UMW

          友臺半導(dǎo)體

          IRF7311

          絲?。?strong>IRF7311;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

          General Description 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and The is the highest performance trench Product requirement with full function reliability a

          文件:2.21333 Mbytes 頁數(shù):6 Pages

          EVVOSEMI

          翊歐

          IRF7311TR

          絲?。?strong>IRF7311;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

          General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

          文件:2.087889 Mbytes 頁數(shù):6 Pages

          UMW

          友臺半導(dǎo)體

          IRF7311

          絲印:IRF7311;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

          General Description 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and The is the highest performance trench Product requirement with full function reliability a

          文件:2.21333 Mbytes 頁數(shù):6 Pages

          EVVOSEMI

          翊歐

          IRF7311

          絲?。?strong>IRF7311;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

          General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

          文件:2.087889 Mbytes 頁數(shù):6 Pages

          UMW

          友臺半導(dǎo)體

          IRF7311TR

          絲?。?strong>IRF7311;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

          General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

          文件:2.087889 Mbytes 頁數(shù):6 Pages

          UMW

          友臺半導(dǎo)體

          IRF7311

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:209.23 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7311PBF

          HEXFET?Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:1.97488 Mbytes 頁數(shù):7 Pages

          IRF

          IRF7311TR

          Generation V Technology

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:214.79 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7311

          Ultra Low On-Resistance

          文件:677.73 Kbytes 頁數(shù):7 Pages

          KERSEMI

          詳細(xì)參數(shù)

          • 型號:

            IRF7311

          • 制造商:

            International Rectifier

          • 功能描述:

            Trans MOSFET N-CH 20V 6.6A 8-Pin SOIC

          • 功能描述:

            TRANS MOSFET N-CH 20V 6.6A 8PIN SO - Rail/Tube

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          IR
          9798
          SMD
          950
          只售原裝正品
          詢價(jià)
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
          詢價(jià)
          121
          8
          IR
          5
          92
          詢價(jià)
          IOR
          23+
          SO-8
          7000
          絕對全新原裝!100%保質(zhì)量特價(jià)!請放心訂購!
          詢價(jià)
          IR
          25+
          PLCC+20
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          IRF
          24+
          SOP-8P
          60
          現(xiàn)貨
          詢價(jià)
          IR
          24+/25+
          750
          原裝正品現(xiàn)貨庫存價(jià)優(yōu)
          詢價(jià)
          IR
          24+
          SMD
          5825
          公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
          詢價(jià)
          IR
          05/06+
          SOP8
          68
          全新原裝100真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          IR
          23+
          SOP8
          5000
          原裝正品,假一罰十
          詢價(jià)
          更多IRF7311供應(yīng)商 更新時(shí)間2026-1-17 20:25:00
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