絲?。?strong>IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

文件：2.087889 Mbytes 頁數(shù)：6 Pages

UMW

友臺半導(dǎo)體

絲?。?strong>IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and The is the highest performance trench Product requirement with full function reliability a

文件：2.21333 Mbytes 頁數(shù)：6 Pages

EVVOSEMI

翊歐

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：209.23 Kbytes 頁數(shù)：7 Pages

IRF

Ultra Low On-Resistance

文件：677.73 Kbytes 頁數(shù)：7 Pages

KERSEMI

絲?。?strong>IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

文件：2.087889 Mbytes 頁數(shù)：6 Pages

UMW

友臺半導(dǎo)體

采用 SO-8 封裝的 20V 雙 N 通道 HEXFET 功率 MOSFET

\n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 雙 N 通道 MOSFET;

Infineon

英飛凌

HEXFET?Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：1.97488 Mbytes 頁數(shù)：7 Pages

IRF

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：214.79 Kbytes 頁數(shù)：7 Pages

IRF

GENERATION V TECHNOLOGY

文件：1.97878 Mbytes 頁數(shù)：7 Pages

IRF

GENERATION V TECHNOLOGY

文件：1.97878 Mbytes 頁數(shù)：7 Pages

IRF