<strong id="5lvfi"><dl id="5lvfi"></dl></strong>

      • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
        <th id="5lvfi"><progress id="5lvfi"></progress></th>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
        1. <del id="5lvfi"></del>

          首頁 >IRF1010E>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF1010E

          Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

          ? Advanced Process Technology ? Ultra Low On-Resistance ? Dynamic dv/dt Rating ? 175°C Operating Temperature ? Fast Switching ? Fully Avalanche Rated Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

          文件:195.51 Kbytes 頁數(shù):8 Pages

          IRF

          IRF1010E

          N-Channel MOSFET Transistor

          文件:338.48 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF1010E

          Ultra Low On-Resistance

          文件:786.41 Kbytes 頁數(shù):8 Pages

          KERSEMI

          IRF1010EL

          Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

          Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

          文件:123.94 Kbytes 頁數(shù):10 Pages

          IRF

          IRF1010ELPBF

          HEXFET Power MOSFET

          Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

          文件:218.72 Kbytes 頁數(shù):10 Pages

          IRF

          IRF1010EPBF

          HEXFET? Power MOSFET

          Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

          文件:231.86 Kbytes 頁數(shù):8 Pages

          IRF

          IRF1010ES

          Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

          Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

          文件:123.94 Kbytes 頁數(shù):10 Pages

          IRF

          IRF1010ESPBF

          HEXFET Power MOSFET

          Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

          文件:218.72 Kbytes 頁數(shù):10 Pages

          IRF

          IRF1010EZ

          AUTOMOTIVE MOSFET

          Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

          文件:285.31 Kbytes 頁數(shù):12 Pages

          IRF

          IRF1010EZ

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:296.01 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          技術(shù)參數(shù)

          • OPN:

            IRF1010EPBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            60 V

          • RDS (on) @10V max:

            12 m?

          • ID @25°C max:

            84 A

          • QG typ @10V:

            86.6 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V

          • VGS(th) max:

            4 V

          • VGS(th):

            3 V

          • Technology:

            IR MOSFET?

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          進(jìn)口原裝
          3000
          庫存現(xiàn)貨
          詢價
          IR
          25+
          TO-220
          20300
          IR原裝特價IRF1010E即刻詢購立享優(yōu)惠#長期有貨
          詢價
          IR
          17+
          TO-220AB
          31518
          原裝正品 可含稅交易
          詢價
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          IR
          25+
          TO-220
          6500
          十七年專營原裝現(xiàn)貨一手貨源,樣品免費送
          詢價
          IR
          24+
          TO-220/TO-263
          10000
          IR系列原裝正品,現(xiàn)貨供應(yīng)IRF1010E,全新原裝,現(xiàn)貨熱賣。
          詢價
          IR
          24+/25+
          998
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          IR
          04+
          原廠原裝
          10000
          自己公司全新庫存絕對有貨
          詢價
          IOR
          24+
          TO-220
          35
          詢價
          IR
          13+
          TO-220
          7258
          原裝分銷
          詢價
          更多IRF1010E供應(yīng)商 更新時間2026-1-20 9:50:00
            <strong id="5lvfi"><dl id="5lvfi"></dl></strong>

              • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
                <th id="5lvfi"><progress id="5lvfi"></progress></th>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                1. <del id="5lvfi"></del>
                  高圆圆一区二区三区 | 91干视频在线观看 | 精品人视频 | 亚洲黄色在线免费观看 | 精品黄色片|