500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features ? 28.4A, 500V, RDS(on) = 0.16? @VGS = 10 V ? Low gate charge ( typical 110 nC) ? Low Crss ( typical 60 pF) ? Fast switching

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FAIRCHILD

仙童半導(dǎo)體

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：647.34 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=28.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

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500V N-Channel MOSFET

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FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，QFET?，500 V，28.4 A，160 mΩ，TO-3P

此類 N 溝道 MOSFET 增強(qiáng)型電場(chǎng)效應(yīng)晶體管是使用安森美半導(dǎo)體的平面條紋 DMOS 專屬技術(shù)生產(chǎn)的。此先進(jìn)技術(shù)特別適用于最大程度降低導(dǎo)通電阻，提供卓越的開關(guān)性能，可承受雪崩和換相模式下的高能量脈沖。此類器件非常適用于高效開關(guān)模式電源、功率因數(shù)校正、基于半橋的電子燈鎮(zhèn)流器。 ?28.4 A、500 V、RDS(on) = 160 mΩ（最大值）（ VGS = 10 V、ID = 14.2 A）\n?低柵極電荷（典型值 110 nC)\n?低 Crss（典型值 60 pF)\n?100% 經(jīng)過雪崩擊穿測(cè)試\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：647.34 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

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ISC

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