N-Channel Power MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

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FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

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ISC

無錫固電

功率 MOSFET，N 溝道，QFET?，150V，70A，28m?，TO-3P

該 N 溝道增強型功率 MOSFET 產(chǎn)品采用飛兆半導體的專有平面條形和 DMOS 技術生產(chǎn)。這種先進的 MOSFET 技術已專門定制用來降低導通電阻，并提供卓越的開關性能和較高的雪崩能量強度。這些器件適用于開關模式電源、音頻放大器、直流電機控制和可變開關電源應用。 ?70A, 150V, RDS(on)= 28mΩ（最大值）@VGS = 10 V, ID = 35A柵極電荷低（典型值：135nC)\n?低 Crss（典型值135pF)\n?100% 經(jīng)過雪崩擊穿測試\n?175°C最大結溫額定值\"\n? 175°C Maximum Junction Temperature Rating;

ONSEMI

安森美半導體

N-Channel Power MOSFET

Features ? 44A, 150V, RDS(on) = 0.028? @VGS = 10 V ? Low gate charge ( typical 135 nC) ? Low Crss ( typical 135 pF) ? Fast switching ? 100 avalanche tested ? Improved dv/dt capability ? 175°C maximum junction temperature rating

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FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 44A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

無錫固電

N-Channel Enhancement Mode Power MOSFET

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HMSEMI

華之美半導體