絲?。?strong>FQA36P15；Package：TO-3PN；P-Channel QFET? MOSFET -150 V, -36 A, 90 mΩ

Features -36 A, -150 V, RDS(on) = 90 mΩ (Max) @VGS = -10 V, ID = -18 A Low Gate Charge (Typ. 81 nC) Low Crss (Typ. 110 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto

文件：2.38431 Mbytes 頁數(shù)：10 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=-36A@ TC=25℃ ·Drain Source Voltage- : VDSS=-150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.09Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：363.98 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

150V P-Channel MOSFET

文件：658.67 Kbytes 頁數(shù)：8 Pages

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150V P-Channel MOSFET

文件：658.67 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

150V P-Channel MOSFET

文件：869.64 Kbytes 頁數(shù)：9 Pages

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功率 MOSFET，P 溝道，QFET?，-150 V，-36 A，90 m?，TO-3P

該 P 溝道增強型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強度。這些器件適用于開關(guān)模式電源、音頻放大器、直流電機控制和可變開關(guān)電源應(yīng)用。 ?-36A, -150V, RDS(on)= 90mΩ（最大值）@VGS = -10 V, ID = -18A柵極電荷低（典型值：81nC)\n?低 Crss（典型值110pF)\n?100% 經(jīng)過雪崩擊穿測試\n?175°C最大結(jié)溫額定值\"\n? 175°C Maximum Junction Temperature Rating;

ONSEMI

安森美半導(dǎo)體

P-Channel QFET? MOSFET -150 V, -36 A, 90 mΩ

Features -36 A, -150 V, RDS(on) = 90 mΩ (Max) @VGS = -10 V, ID = -18 A Low Gate Charge (Typ. 81 nC) Low Crss (Typ. 110 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto

文件：2.38431 Mbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

150V P-Channel MOSFET

文件：869.64 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

150V P-Channel MOSFET

文件：869.64 Kbytes 頁數(shù)：9 Pages

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仙童半導(dǎo)體