400V N-Channel MOSFET

文件：732.38 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：362.4 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

功率 MOSFET，N 溝道，QFET?，400V，30A，140m?，TO-3P

該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?30A, 400V, RDS(on)= 140mΩ（最大值）@VGS = 10 V, ID = 15A柵極電荷低（典型值：90nC)\n?低 Crss（典型值60pF)\n?100% 經(jīng)過雪崩擊穿測試\n?100% avalanche tested;

ONSEMI

安森美半導(dǎo)體

HiPerFET Power MOSFETs Q-Class

HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Advantage ? Easy to mount ? Space savings ? High power density

文件：107.23 Kbytes 頁數(shù)：2 Pages

IXYS

艾賽斯

HiPerFET Power MOSFETs Q-Class

HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Advantage ? Easy to mount ? Space savings ? High power density

文件：107.23 Kbytes 頁數(shù)：2 Pages

IXYS

艾賽斯

? 400V Trench Technology

Features: ? 400V Trench Technology ? High Speed Switching ? Low Conduction Loss ? Positive Temperature Coefficient ? Easy parallel Operation ? RoHS compliant ? JEDEC Qualification Applications : Plasma Display Panel, Soft switching application,

文件：820.7 Kbytes 頁數(shù)：6 Pages

TRINNO