300V N-Channel MOSFET

Description UniFET? MOSFET is Fairchild Semiconductor?’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=38.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) =85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

無錫固電

N 溝道 QFET? MOSFET 300 V，38.4 A，85 mΩ

此類 N 溝道增強型電場效應(yīng)晶體管是使用安森美半導(dǎo)體的平面條紋和 DMOS 專屬技術(shù)生產(chǎn)的。此先進技術(shù)特別適用于最大程度降低導(dǎo)通電阻，提供出色的開關(guān)性能，可承受雪崩和換相模式下的高能量脈沖。這些器件非常適用于高效開關(guān)模式電源、功率因數(shù)校正、基于半橋的電子燈鎮(zhèn)流器。 ?38.4 A、300 V、RDS(on) = 85 mΩ（最大值）（VGS = 10 V、ID = 19.2 A）\n?低柵極電荷（典型值 90 nC)\n?低 Crss（典型值 70 pF)\n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=38A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and PFC Circuits..

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ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 38A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 100mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and Current Regulators

文件：322.55 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電