| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FQA44N08 | 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：662.32 Kbytes 頁數(shù)：8 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
FQA44N08 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=49.8A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) =34mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv 文件：363.57 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
FQA44N08 | 80V N-Channel MOSFET | ONSEMI 安森美半導體 | ONSEMI | |
80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：664.35 Kbytes 頁數(shù)：8 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 35.6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 34mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c 文件：329.06 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：673.81 Kbytes 頁數(shù)：9 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD |
詳細參數(shù)
- 型號：
FQA44N08
- 功能描述：
MOSFET 80V N-Channel QFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
TO-3P |
7786 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
仙童 |
06+ |
TO-247 |
2000 |
原裝 |
詢價 | ||
harris |
16+ |
原廠封裝 |
10000 |
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢 |
詢價 | ||
ON |
25+ |
TO-3P |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Fairchild/ON |
22+ |
TO3P3 SC653 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
FAIRCHILD |
26+ |
SOT23 |
86720 |
全新原裝正品價格最實惠 假一賠百 |
詢價 | ||
FSC |
04+ |
TO-3P |
350 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ON Semiconductor |
2022+ |
TO-3P-3,SC-65-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
FAIRCHILD |
2023+環(huán)保現(xiàn)貨 |
TO-3P |
20000 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務 |
詢價 | ||
Fairchild |
23+ |
33500 |
詢價 |
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