P-Channel PowerTrench? MOSFET -30 V, -20 A, 14.4 mΩ

Features Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A HBM ESD protection level of 8 kV typical(note 3) Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power an

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ONSEMI

安森美半導(dǎo)體

Dual N-Channel PowerTrench MOSFET

General Description FDMC6890NZ is a compact single package solution for DC to DC converters with excellent thermal and switching characteristics. Inside the Power 33 package features two N-channel MOSFETs with low on-state resistance and low gate charge to maximize the power conversion and switch

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FAIRCHILD

仙童半導(dǎo)體

絲印：FDMC7200；Package：Power33；Dual N-Channel PowerTrench? MOSFET 30 V, 12 mΩ and 23.5 mΩ

Features Q1: N-Channel Max rDS(on) = 23.5 mΩ at VGS = 10 V, ID = 6 A Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7 A RoHS Compliant Applications Mobile Computing Mobile Internet Devices

文件：417.67 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 頁數(shù)：2 Pages

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仙童半導(dǎo)體

N-Channel Power Trench? SyncFET 30 V, 20 A, 2.2 m廓

General Description The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an

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FAIRCHILD

仙童半導(dǎo)體

MOSFET – N-Channel, POWERTRENCH, SyncFET 30 V, 18 A, 9.3 m

General Description This FDMC7692S is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery P

文件：422.74 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fdmc86116z/marking.html">FDMC86116Z；Package：WDFN8；N-Channel Power MOSFET

Features ? Max RDS(on) = 103 m at VGS = 10 V, ID = 3.3 A ? Max RDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A ? HBM ESD Protection Level > 3 kV Typical (Note 1) ? 100 UIL Tested ? These Devices are Pb?Free and are RoHS Compliant Applications ? DC?DC Conversion General Description This N

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安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fdmc86116z/marking.html">FDMC86116Z；Package：WDFN8；N-Channel Power MOSFET

Features ? Max RDS(on) = 103 m at VGS = 10 V, ID = 3.3 A ? Max RDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A ? HBM ESD Protection Level > 3 kV Typical (Note 1) ? 100 UIL Tested ? These Devices are Pb?Free and are RoHS Compliant Applications ? DC?DC Conversion General Description This N

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安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/apg40n10nf/marking.html">APG40N10NF；Package：DFN5X6-8L；Enhancement Mode Field Effect Transistor N-Channel

Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Synchronous-rectification application

文件：1.9095 Mbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子

MOSFET – P-Channel, POWERTRENCH

General Description This P?Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on?state resistance and optimized for superior switching performance. Features ? Max rDS(on) = 307 m at VGS = ?10 V, ID =

文件：195.73 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體