MOSFET – N-Channel, POWERTRENCH, SyncFET 30 V, 18 A, 9.3 m

General Description This FDMC7692S is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery P

文件：422.74 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

N-Channel Power Trench? SyncFETTM

文件：218.88 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，Power Trench? SyncFET?，30V，18A，9.3mΩ

此FDMC7692S采用飛兆半導(dǎo)體先進(jìn)的Power Trench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通阻抗而定制的。 該器件非常適用于筆記本電腦和便攜式電池組中的電源管理和負(fù)載開關(guān)應(yīng)用。 ?VGS = 10 V，ID = 12.5 A時(shí)，最大rDS(on) = 9.3 mΩ\n?VGS = 4.5 V，ID = 10.4 A時(shí)，最大rDS(on) = 13.6 mΩ\n?通態(tài)電阻rDS(on)極低的高性能技術(shù)\n?終端是符合RoHS標(biāo)準(zhǔn)的無鉛產(chǎn)品;

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench? MOSFET 30 V, 7.5 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast s

文件：339.92 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 30 V, 7.5 m廓

文件：281.55 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 30 V, 8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switc

文件：340.18 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體