DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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FAIRCHILD

仙童半導(dǎo)體

N 溝道，雙 CoolTM 33 PowerTrench? MOSFET，30V，40A，2.2mΩ

此 N 溝道 MOSFET 采用飛兆先進(jìn)的 PowerTrench? 工藝生產(chǎn)。先進(jìn)的硅技術(shù)和 Dual CoolTM 封裝技術(shù)完美融合，可在提供最小 rDS(on)的同時(shí)通過極低的結(jié)至環(huán)境熱阻保持卓越的開關(guān)性能。 ?Dual CoolT 頂側(cè)冷卻 PQFN 封裝\n?最大 rDS(on) = 2.2 mΩ（VGS = 10 V、ID = 22 A）\n?VGS = 4.5 V，ID = 18 A時(shí)，Max rDS(on) = 3.3 mΩ\n?極低 rDS(on)的高性能技術(shù)\n?終端是符合 RoHS 標(biāo)準(zhǔn)的無鉛產(chǎn)品;

ONSEMI

安森美半導(dǎo)體

N-Channel Power Trench? SyncFET 30 V, 20 A, 2.2 m廓

General Description The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an

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仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 30 V, 2.8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast swi

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仙童半導(dǎo)體

N-Channel PowerTrench? SyncFET 30 V, 42 A, 2.4 m廓

General Description The FDMS7660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of a

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仙童半導(dǎo)體