N-Channel Power Trench? SyncFET 30 V, 20 A, 2.2 m廓

General Description The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an

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FAIRCHILD

仙童半導(dǎo)體

N 溝道，Power Trench? SyncFET?，30V，20A，2.2mΩ

FDMC7660S設(shè)計用于最大限度地降低功率轉(zhuǎn)換應(yīng)用中的損耗。 先進的硅和封裝技術(shù)完美融合，在保持卓越開關(guān)性能的同時，提供了最低的 rDS(on)。 該器件具有高效單片肖特基體二極管的新增優(yōu)點。 ? 最大值 rDS(on)=2.2 mΩ（需 VGS=10 V、ID=20 A\n? 最大值 rDS(on)=2.95 mΩ（需 VGS=4.5 V、ID=18 A\n?高性能技術(shù)可實現(xiàn)極低的 rDS(on)\n?終端無引線且符合RoHS標準;

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench? MOSFET 30 V, 2.8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast swi

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FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? SyncFET 30 V, 42 A, 2.4 m廓

General Description The FDMS7660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of a

文件：483.34 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Switched-Capacitor Voltage Converter

文件：112.42 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司