<strong id="5lvfi"><dl id="5lvfi"></dl></strong>

      • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
        <th id="5lvfi"><progress id="5lvfi"></progress></th>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
        1. <del id="5lvfi"></del>

          首頁 >FDM>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FDMA1024NZ

          Dual N-Channel PowerTrench? MOSFET 20 V, 5.0 A, 54 m廓

          General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Features ■ Max rDS(on) = 23 m? at VGS = 4.5 V, ID = 9.5 A ■ Max rDS(on) = 29 m? at VGS = 2.5 V,

          文件:315.37 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導體

          FDMA1025P

          Dual P-Channel PowerTrench MOSFET -20V, -3.1A, 105mohm

          General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected

          文件:377.99 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導體

          FDMA1027P

          Dual P-Channel PowerTrench MOSFET

          General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected i

          文件:108.33 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導體

          FDMA1027PT

          Dual P-Channel PowerTrench? MOSFET -20 V, -3 A, 120 m廓

          General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected i

          文件:294.76 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導體

          FDMA1032CZ

          20V Complementary PowerTrench MOSFET

          General Description This device is designed specifically as a single package solution for a DC/DC Switching MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The

          文件:163.98 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導體

          FDMA3028N

          Dual N-Channel PowerTrench? MOSFET 30 V, 3.8 A, 68 m廓

          General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2

          文件:284.83 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導體

          FDMA410NZ

          絲?。?a target="_blank" title="Marking" href="/410/marking.html">410;Package:MicroFET2X2;Single N-Channel 1.5 V Specified PowerTrench? MOSFET 20 V, 9.5 A, 23 m?

          Features Max rDS(on) = 23 m? at VGS = 4.5 V, ID = 9.5 A Max rDS(on) = 29 m? at VGS = 2.5 V, ID = 8.0 A Max rDS(on) = 36 m? at VGS = 1.8 V, ID = 4.0 A Max rDS(on) = 50 m? at VGS = 1.5 V, ID = 2.0 A HBM ESD protection level > 2.5 kV (Note 3) Low Profile-0.8 mm maximum in the new package

          文件:612.13 Kbytes 頁數(shù):9 Pages

          ONSEMI

          安森美半導體

          FDMA410NZT

          絲印:410T;Package:MicroFET2x2;MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m

          Description This Single N?Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe. This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package

          文件:485.92 Kbytes 頁數(shù):9 Pages

          ONSEMI

          安森美半導體

          FDMA410NZT-F130

          絲?。?a target="_blank" title="Marking" href="/410t/marking.html">410T;Package:MicroFET2x2;MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m

          Description This Single N?Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe. This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package

          文件:485.92 Kbytes 頁數(shù):9 Pages

          ONSEMI

          安森美半導體

          FDMA430NZ

          Single N-Channel 2.5V Specified PowerTrench MOSFET

          General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe. Features ■ RDS(on) = 40m? @ VGS = 4.5 V, ID = 5.0A ■ RDS(on) = 50m? @ VGS = 2.5 V, ID = 4.5A ■ Low

          文件:638.18 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導體

          技術參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            25

          • VGS Max (V):

            20

          • VGS(th) Max (V):

            3

          • ID Max (A):

            60

          • PD Max (W):

            33

          • RDS(on) Max @ VGS = 4.5 V(mΩ):

            8

          • RDS(on) Max @ VGS = 10 V(mΩ):

            5.8

          • Qg Typ @ VGS = 4.5 V (nC):

            37

          • Qg Typ @ VGS = 10 V (nC):

            8

          • Ciss Typ (pF):

            1221

          • Package Type:

            PQFN-8

          供應商型號品牌批號封裝庫存備注價格
          ONSEMI/安森美
          25+
          8-PQFN5x6
          20300
          ONSEMI/安森美原裝特價FDMS7578即刻詢購立享優(yōu)惠#長期有貨
          詢價
          ON/安森美
          20+
          PQFN-8
          120000
          原裝正品 可含稅交易
          詢價
          onsemi(安森美)
          25+
          Power-56-8
          21000
          正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
          詢價
          FAIRCHILD
          24+
          原廠原封
          6523
          進口原裝公司百分百現(xiàn)貨可出樣品
          詢價
          FSC
          24+
          DFN5x6
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢價
          FAI
          2018+
          26976
          代理原裝現(xiàn)貨/特價熱賣!
          詢價
          三年內
          1983
          只做原裝正品
          詢價
          FSC/ON
          23+
          原包裝原封 □□
          15000
          原裝進口特價供應 特價,原裝元器件供應,支持開發(fā)樣品 更多詳細咨詢 庫存
          詢價
          FAIRCHILD
          25+
          QFN
          2006
          現(xiàn)貨
          詢價
          ON
          25+
          QFN-8
          3675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          更多FDM供應商 更新時間2026-1-21 18:07:00
            <strong id="5lvfi"><dl id="5lvfi"></dl></strong>

              • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
                <th id="5lvfi"><progress id="5lvfi"></progress></th>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                1. <del id="5lvfi"></del>
                  白丝自慰一区二区 | 成年美女黄网站色大片app | 免费毛片18女人毛片大全在线看 | 黄色日逼视频网站 | 欧美三级在线视频麻豆 |