320 W, 4.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMT

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WOLFSPEED

320 W, 4.0 GHz, GaN HEMT Die

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CREE

科銳

320-W, 4.0-GHz, GaN HEMT Die

Wolfspeed’s CGHV40320D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity. GaN HEMTs offer greater powe ·Up to 4-GHz operation;

MACOM

320 W; 4.0 GHz; GaN HEMT Die

The CGHV40320D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated-electron-drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power densit ·19 dB Typical Small Signal Gain at 4 GHz\n·65% Typical Power Added Efficiency\n·320 W Typical PSAT\n·50 V Operation\n·High Breakdown Voltage\n·Up to 4 GHz Operation\n;

MACOM