70 W, 4.4 - 5.9 GHz, 50 V, RF Power GaN HEMT

Description Wolfspeed's CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. The good efficiency, high gain

文件：2.06667 Mbytes 頁數(shù)：14 Pages

WOLFSPEED

70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT

文件：915.52 Kbytes 頁數(shù)：10 Pages

CREE

科銳

70 W; 4500 to 5900 MHz; internally matched GaN HEMT for C-Band Radar Systems

The CGHV59070 is an internally matched; gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070; operating from a 50 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwi ·4.4 – 5.9 GHz Operation\n·90 W POUT typical at 50 V\n·14 dB Power Gain\n·55 % Drain Efficiency\n·Internally Matched;

MACOM

70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT

文件：915.52 Kbytes 頁數(shù)：10 Pages

CREE

科銳

70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT

文件：915.52 Kbytes 頁數(shù)：10 Pages

CREE

科銳

70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT

文件：915.52 Kbytes 頁數(shù)：10 Pages

CREE

科銳

70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT

文件：915.52 Kbytes 頁數(shù)：10 Pages

CREE

科銳

70-W; 4500 to 5900-MHz; internally matched GaN HEMT for C-Band Radar Systems

4.4 – 5.9 GHz Operation 90 W POUT typical at 50 V 14 dB Power Gain 55 % Drain Efficiency Internally Matched ? 4.4 – 5.9 GHz Operation\n?90 W POUT typical at 50 V\n?14 dB Power Gain\n?55 % Drain Efficiency\n?Internally Matched;

MACOM

70-W; 4500 to 5900-MHz; internally matched GaN HEMT for C-Band Radar Systems

4.4 – 5.9 GHz Operation 90 W POUT typical at 50 V 14 dB Power Gain 55 % Drain Efficiency Internally Matched ? 4.4 – 5.9 GHz Operation\n?14 dB Power Gain\n?Internally Matched;

MACOM

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評(píng)估和開發(fā)套件，開發(fā)板 描述：TEST FIXTURE FOR CGHV59070F

WOLFSPEED