40 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMT

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40 W, 6.0 GHz, GaN HEMT Die

文件：654.58 Kbytes 頁數(shù)：7 Pages

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科銳

40-W, 6.0-GHz, GaN HEMT Die

Wolfspeed’s CGHV60040D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity. GaN HEMTs offer greater powe ·Up to 6-GHz operation;

MACOM

Package：模具；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET HEMT 50V DIE

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