30 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs

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WOLFSPEED

30 W, 6.0 GHz, GaN HEMT Die

文件：622.61 Kbytes 頁數(shù)：8 Pages

CREE

科銳

30-W, 6.0-GHz, GaN HEMT Die

Wolfspeed’s CGH60030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power

MACOM

30 W; 6.0 GHz; GaN HEMT Die

The CGH60030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density ·30 W Typical PSAT\n·28 V Operation\n·High Breakdown Voltage\n·High Temperature Operation\n·Up to 6 GHz Operation\n·High Efficiency;

MACOM

Package：模具；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET HEMT 28V DIE

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