60 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs o

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WOLFSPEED

60 W, 6.0 GHz, GaN HEMT Die

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CREE

科銳

60 W; 6.0 GHz; GaN HEMT Die

Note: CGH60060D is Not Recommended for New Designs. Refer to CG2H80060D. The CGH60060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocit ·60 W Typical PSAT\n·28 V Operation\n·High Breakdown Voltage\n·High Temperature Operation\n·Up to 6 GHz Operation\n·High Efficiency;

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