120 W, 6.0 GHz, GaN HEMT Die

Cree’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power de

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CREE

科銳

120 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs o

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WOLFSPEED

120-W, 6.0-GHz, GaN HEMT Die

Wolfspeed’s CGH60120D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power

MACOM

Low forward voltage drop

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LITTELFUSE

力特

Ultra-fast Rectifier

FEATURES ·1200V blocking voltage ·Very short recovery time ·Soft recovery behaviour ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Anti-parallel diode for high frequency switching devices ·Anti-saturation diode ·Snubber diode ·Free whe

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ISC

無(wú)錫固電

1,200V 60A 40mΩ Silicon Carbide MOSFET

Features Low On Resistance High Speed Switching High Frequency Operation Fast Reverse Recovery Easy to Parallel & Simple to Drive Halogen Free, RoHS Compliant Applications Switch Mode Power Supplies Solar Inverters DC/DC Converters Battery Chargers Motor Drives Induction Heating

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FS