isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV? N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? TO-264 MAX Package

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? TO-264 MAX Package

文件：78.21 Kbytes 頁數(shù)：2 Pages

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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

1000V 28A 0.350? Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses along w

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.37Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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