isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

無錫固電

GIGABIT RJ45 LAN MAGNETIC

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ABRACON

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 1002 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. FEATURES: ? PG = 12 dB min at 2 W / 1,000 MHz ? Hermetic Microstrip Package ? Omnigold? Metalization System

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ASI

High Power Fixed Attenuators (Radiator built-in)

High Power Fixed Attenuators (Radiator built-in) ■Features 1.Small Size and Economical Beryllia is used for the material of the resistance element to enable the termination to be of small size and low cost. 2.Connectors Used In the coupling portion, the AT-1000 Series has an SMA t

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HIROSEHirose Electric Company

廣瀨日本廣瀨電機(jī)株式會社