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          首頁 >APT>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          APT1001R2BN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID=10A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:359.38 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1001R2HN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID=9A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:360.21 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1001R3AN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 8.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

          文件:309.34 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1001R3BN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID=10A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:359.63 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1001R3BN

          N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          文件:52.1 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT1001R3HN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID=9A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:297.68 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1001R6BFLL

          POWER MOS 7 R FREDFET

          Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses along with exceptionally

          文件:153.23 Kbytes 頁數(shù):5 Pages

          ADPOW

          APT1001R6BFLL

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

          文件:372.49 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1001R6BN

          N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          文件:50.32 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT1001R6SFLL

          POWER MOS 7 R FREDFET

          Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses along with exceptionally

          文件:153.23 Kbytes 頁數(shù):5 Pages

          ADPOW

          技術(shù)參數(shù)

          • Status:

            In Production

          • Product Type:

            Si Diode

          • VRRM (V):

            600

          • VF (V):

            1.6

          • Current (A) Tc=80 C:

            100

          • Silicon Type:

            FRED diode

          • PKG:

            SOT-227

          供應(yīng)商型號品牌批號封裝庫存備注價格
          APT
          23+
          模塊
          98
          全新原裝貨期一周
          詢價
          24+
          1100
          詢價
          0
          詢價
          APT
          15+
          TO-264
          11560
          全新原裝,現(xiàn)貨庫存,長期供應(yīng)
          詢價
          APT
          23+
          TO-247
          3200
          絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
          詢價
          APT
          16+
          NA
          8800
          原裝現(xiàn)貨,貨真價優(yōu)
          詢價
          MICROSEMI
          24+/25+
          10
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          KINGBRIGH
          17+
          NA
          6200
          100%原裝正品現(xiàn)貨
          詢價
          APT
          25+
          PLCC84
          3600
          大量現(xiàn)貨庫存,提供一站式服務(wù)!
          詢價
          MICROSEMI
          2016+
          TO247
          9000
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          更多APT供應(yīng)商 更新時間2025-8-28 16:26:00
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