N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV? N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：297.27 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

POWER MOS IV 1000V 5.5A 2.00 Ohm

APT

晶科電子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：331.43 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

GIGABIT RJ45 LAN MAGNETIC

文件：628.88 Kbytes 頁數(shù)：2 Pages

ABRACON

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 1002 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. FEATURES: ? PG = 12 dB min at 2 W / 1,000 MHz ? Hermetic Microstrip Package ? Omnigold? Metalization System

文件：18.18 Kbytes 頁數(shù)：1 Pages

ASI