THERMAL MANAGEMENT PRESSURE AND TEMPERATURE SENSORS

Features Benefits ? Combined or discrete P+T sensing ? Wide selection of technologies, sealing methods, form factors, ports and connectors ? Wide refrigerant / coolant resistance (R134a, R1234yf, R744, glycol, oil) ? Analog, SENT or LIN output ? High accuracy levels

文件：108.2 Kbytes 頁數(shù)：1 Pages

SENSATA

森薩塔

絲印：APT；Package：8LdMSOP；Quintuple Voltage Monitor

The ISL88031 is a quintuple voltage-monitoring supervisor combining competitive reset threshold accuracy and low power consumption. This device combines popular functions such as Power-On Reset, Undervoltage Supply Supervision, reset signaling and Manual Reset. Monitoring up to five different volt

文件：463.86 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

絲?。?strong>APT；Package：DO-214AC；400W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 400W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.2336 Mbytes 頁數(shù)：7 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?strong>APT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 頁數(shù)：7 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

ISOTOP SiC Diode Full Bridge Power Module

Features ? SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ? ISOTOP? Package (SOT-227) ? Very low stray inductance ? High level of integration Benefits ? Outstanding perfo

文件：76.06 Kbytes 頁數(shù)：3 Pages

MICROSEMI

美高森美

ISOTOP SiC Diode Full Bridge Power Module

Features ? SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ? ISOTOP? Package (SOT-227) ? Very low stray inductance ? High level of integration Benefits ? Outstanding perfo

文件：76.57 Kbytes 頁數(shù)：3 Pages

MICROSEMI

美高森美

APT Speaker

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文件：2.19721 Mbytes 頁數(shù)：1 Pages

SOVICO

Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs

Power MOS VI? is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

文件：35.76 Kbytes 頁數(shù)：2 Pages

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=11A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：326.98 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：309.65 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電