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首頁 >APT>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
APT1001R1AVR	文件：68.34 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching 文件：68.34 Kbytes 頁數(shù)：4 Pages	ADPOW	ADPOW
APT1001R1BN	文件：52.1 Kbytes Page：4 Pages	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 文件：52.1 Kbytes 頁數(shù)：4 Pages	ADPOW	ADPOW
APT1001R1BN	文件：359.41 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=10.5A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- 文件：359.41 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
APT1001R1BNR	文件：371.23 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：371.23 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
APT1001R1BVFR	文件：70.62 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery Body 文件：70.62 Kbytes 頁數(shù)：4 Pages	ADPOW	ADPOW
APT1001R1DN	文件：326.98 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=11A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c 文件：326.98 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
APT1001R1GN	文件：331.53 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：331.53 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
APT1001R1HN	文件：297.69 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- 文件：297.69 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
APT1001R1HVR	文件：66.93 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching 文件：66.93 Kbytes 頁數(shù)：4 Pages	ADPOW	ADPOW
APT1001R2AN	文件：309.4 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D 文件：309.4 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC

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技術(shù)參數(shù)

Status：
In Production
Product Type：
Si Diode
VRRM (V)：
600
VF (V)：
1.6
Current (A) Tc=80 C：
100
Silicon Type：
FRED diode
PKG：
SOT-227

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市榮澤信電子科技有限公司	APT2X101D100J	APT	23+	模塊	98	全新原裝貨期一周	詢價(jià)
深圳市一線半導(dǎo)體有限公司	APT8075BN		24+		1100		詢價(jià)
深圳市錦達(dá)世紀(jì)科技有限公司	APT12040JVRAPT模塊				0		詢價(jià)
深圳市勤思達(dá)科技有限公司	APT30M40LVR	APT	15+	TO-264	11560	全新原裝,現(xiàn)貨庫存,長(zhǎng)期供應(yīng)	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	APT8075BN	APT	23+	TO-247	3200	絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購!	詢價(jià)
深圳市利加科技有限公司	APT1201R5BVR	APT	16+	NA	8800	原裝現(xiàn)貨,貨真價(jià)優(yōu)	詢價(jià)
深圳市聯(lián)世界科技有限公司	APT25GT120BRG	MICROSEMI	24+/25+		10	原裝正品現(xiàn)貨庫存價(jià)優(yōu)	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	APT1608SECK	KINGBRIGH	17+	NA	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市福安甌科技有限公司	APTX100ED	APT	25+	PLCC84	3600	大量現(xiàn)貨庫存,提供一站式服務(wù)!	詢價(jià)
深圳市凌旭科技有限公司	APT30D20BCTG	MICROSEMI	2016+	TO247	9000	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)

更多APT供應(yīng)商更新時(shí)間2025-8-28 16:26:00

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