| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC 文件：309.64 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VI? is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally 文件：35.76 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 文件：50.79 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=11A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c 文件：359.4 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c 文件：371.21 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c 文件：371.87 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
POWER MOS V FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Avalanche Ener 文件：123.99 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching 文件：68.19 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=11A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D 文件：326.54 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VI? is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally 文件：35.76 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW |
技術(shù)參數(shù)
- Status：
In Production
- Product Type：
Si Diode
- VRRM (V)：
600
- VF (V)：
1.6
- Current (A) Tc=80 C：
100
- Silicon Type：
FRED diode
- PKG：
SOT-227
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Microchip |
1000 |
只做正品 |
詢價(jià) | ||||
PAZ |
17+ |
DIP-5 |
9700 |
只做全新進(jìn)口原裝,現(xiàn)貨庫存 |
詢價(jià) | ||
原裝MICROCHIP |
25+ |
TO247 |
8880 |
原裝認(rèn)準(zhǔn)芯澤盛世！ |
詢價(jià) | ||
APT |
專業(yè)鐵帽 |
TO-3 |
67500 |
鐵帽原裝主營-可開原型號(hào)增稅票 |
詢價(jià) | ||
APT |
23+ |
TO-3P |
3000 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
APT |
23+ |
TO-247 |
3200 |
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購! |
詢價(jià) | ||
APT |
15+ |
TO-264 |
11560 |
全新原裝,現(xiàn)貨庫存,長(zhǎng)期供應(yīng) |
詢價(jià) | ||
Kingb |
25 |
3010 |
原裝正品 |
詢價(jià) | |||
MICROSEMI |
25+ |
TO-247 |
20000 |
原裝正品價(jià)格優(yōu)惠,志同道合共謀發(fā)展 |
詢價(jià) | ||
TOS |
04+ |
TO-3P |
995200 |
原裝現(xiàn)貨價(jià)格優(yōu)勢(shì)-含16%增值稅 |
詢價(jià) |
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