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                >APT>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          APT1004RBN
          N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
          
POWER MOS IV?
N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
          文件：50.93 Kbytes 頁數(shù)：4 Pages
          ADPOW
          

          APT1004RCN
          N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
          
POWER MOS IV?
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
          文件：49.92 Kbytes 頁數(shù)：4 Pages
          ADPOW
          

          APT1004RCN
          isc N-Channel MOSFET Transistor
          
FEATURES
·Drain Current : ID= 3.6A@ TC=25℃
·Drain Source Voltage
: VDSS= 1000V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 4Ω(Max) @ VGS= 10V
·100 avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

DESCRIPTION
·motor drive, DC-D
          文件：297.75 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          APT1004RDN
          isc N-Channel MOSFET Transistor
          
FEATURES
·Drain Current : ID= 4.4A@ TC=25℃
·Drain Source Voltage
: VDSS=1000V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 4Ω(Max) @ VGS= 10V
·100 avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·motor drive, DC-DC c
          文件：332.48 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          APT1004RGN
          isc N-Channel MOSFET Transistor
          
FEATURES
·Drain Current : ID= 3.3A@ TC=25℃
·Drain Source Voltage
: VDSS= 1000V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 4.2Ω(Max) @ VGS= 10V
·100 avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

DESCRIPTION
·motor drive, DC
          文件：297.25 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          APT1004RGN
          N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
          
POWER MOS IV?
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
          文件：50.25 Kbytes 頁數(shù)：4 Pages
          ADPOW
          

          APT1004RKN
          N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
          
POWER MOS IV?
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
          文件：51.05 Kbytes 頁數(shù)：4 Pages
          ADPOW
          

          APT1004RKN
          isc N-Channel MOSFET Transistor
          
FEATURES
·Drain Current –ID= 3.6A@ TC=25℃
·Drain Source Voltage-
: VDSS= 1000V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 4Ω(Max)@VGS= 10V
·100 avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·motor drive, DC-DC co
          文件：332.91 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          APT10050B2LC
          Power MOS VITM is a new generation of low gate charge, high voltage
          
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally
          文件：68.49 Kbytes 頁數(shù)：2 Pages
          ADPOW
          

          APT10050B2VFR
          isc N-Channel MOSFET Transistor
          
FEATURES
·Drain Current –ID= 21A@ TC=25℃
·Drain Source Voltage-
: VDSS= 1000V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.5Ω(Max)@VGS= 10V
·100 avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·motor drive, DC-DC c
          文件：371.72 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Status：
            In Production
          • Product Type：
            Si Diode
          • VRRM (V)：
            600
          • VF (V)：
            1.6
          • Current (A) Tc=80 C：
            100
          • Silicon Type：
            FRED diode
          • PKG：
            SOT-227
          
            
          
        
          
            
          供應(yīng)商型號品牌批號封裝庫存備注價格
          
                
          



          APT
          		

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          APT
          		

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          11560
          		

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          APT
          		

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          MICROSEMI
          		

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          APT
          		

          25+
          		

          PLCC84
          		

          3600
          		

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          MICROSEMI
          		

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          更多APT供應(yīng)商
            更新時間2025-8-28 16:26:00
        
          
        
          
          
          
            
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