| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
High-Efficiency DC-DC Conve Features (1) High-speed switching (2) Small gate charge: QSW = 19 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 m? (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V 文件：465.82 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/tk3r1p04pl/marking.html">TK3R1P04PL；Package：DPAK；MOSFETs Silicon N-channel MOS 1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 19 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 文件：501.63 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲印：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor ? DESCRITION ? Switching Voltage Regulators ? FEATURES ? Low drain-source on-resistance: RDS(ON) = 3.1m? (MAX) (VGS = 10 V) ? Enhancement mode: Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliab 文件：333.59 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
MOSFETs Silicon N-channel MOS 1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 19 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 文件：501.63 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
High-Efficiency DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 m? (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 文件：728.52 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/k3r2a10pl/marking.html">K3R2A10PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS 1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS 文件：626.49 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
MOSFETs Silicon N-channel MOS 1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS 文件：626.49 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
High-Efficiency DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 21 nC (typ.) (3) Small output charge: Qoss = 66 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.4 m? (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V 文件：471.28 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=100A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.2Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：372.93 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
isc N-Channel MOSFET Transistor ? DESCRITION ? Switching Voltage Regulators ? FEATURES ? Low drain-source on-resistance: RDS(ON) = 2.5m? (typ.) (VGS = 10 V) ? Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.7mA) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and relia 文件：289.19 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC |
技術(shù)參數(shù)
- Polarity：
N-ch
- VDSS(V)：
600
- VGSS(V)：
+/-30
- ID(A)：
2.5
- PD(W)：
30
- Ciss(pF)：
380
- Qg(nC)：
9.0
- =10V：
2.8
- Number of pins：
3
- Surface mount package：
N
- Package name(Toshiba)：
TO-220SIS
- Generation：
π-MOSⅦ
- Width×Length×Height(mm)：
10.0 x 15.0 x 4.5
- Package Size(mm^2)：
150.00
- Drive voltage type：
10V Gate Drive
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/東芝 |
25+ |
TO-220F |
45000 |
TOSHIBA/東芝全新現(xiàn)貨TK3A60DA即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有排單訂 |
詢價(jià) | ||
TOSHIBA |
11+ |
TO-220F |
8000 |
全新原裝,絕對(duì)正品現(xiàn)貨供應(yīng) |
詢價(jià) | ||
TOSHIBA |
23+ |
TO-220F |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢價(jià) | ||
TOSHIBA |
25+23+ |
TO-220F |
15953 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
TOSHIBA |
25+ |
TO-220F |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
TOSHIBA/東芝 |
2447 |
TO-220F |
100500 |
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
TOSHIBA |
23+ |
TO-220屬封 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
TOSHIBA/東芝 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
TOSHIBA/東芝 |
2022+ |
TO-220F |
32500 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
TOSHIBA |
13+ |
TO-220F |
145 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) |
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