| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.51Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：279.85 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) =4.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：280.29 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
絲?。?a target="_blank" title="Marking" href="/k3a90e/marking.html">K3A90E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance : RDS(ON) = 3.7 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 720 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.25 mA) 文件：389.69 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/tk3p80e/marking.html">TK3P80E；Package：DPAK；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 3.9 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 文件：382.93 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
isc N-Channel MOSFET Transistor ? DESCRITION ? Switching Voltage Regulators ? FEATURES ? Low drain-source on-resistance: RDS(ON) = 2.5m? (typ.) (VGS = 10 V) ? Enhancement mode: Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and relia 文件：288.93 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
High-Efficiency DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 17.5 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 m? (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 文件：438.8 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/k3r1a04pl/marking.html">K3R1A04PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS 1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 17.5 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS 文件：497.25 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
MOSFETs Silicon N-channel MOS 1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 17.5 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS 文件：497.25 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
High-Efficiency DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 17.5 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 m? (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 文件：448.12 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
iscN-Channel MOSFET Transistor ? DESCRITION ? Switching Voltage Regulators ? FEATURES ? Low drain-source on-resistance: RDS(ON) = 3.1m? (MAX) (VGS = 10 V) ? Enhancement mode: Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliab 文件：328.93 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無錫固電 | ISC |
技術(shù)參數(shù)
- Polarity：
N-ch
- VDSS(V)：
600
- VGSS(V)：
+/-30
- ID(A)：
2.5
- PD(W)：
30
- Ciss(pF)：
380
- Qg(nC)：
9.0
- =10V：
2.8
- Number of pins：
3
- Surface mount package：
N
- Package name(Toshiba)：
TO-220SIS
- Generation：
π-MOSⅦ
- Width×Length×Height(mm)：
10.0 x 15.0 x 4.5
- Package Size(mm^2)：
150.00
- Drive voltage type：
10V Gate Drive
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/東芝 |
25+ |
TO-220F |
45000 |
TOSHIBA/東芝全新現(xiàn)貨TK3A60DA即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有排單訂 |
詢價(jià) | ||
TOSHIBA |
11+ |
TO-220F |
8000 |
全新原裝,絕對(duì)正品現(xiàn)貨供應(yīng) |
詢價(jià) | ||
TOSHIBA |
23+ |
TO-220F |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
TOSHIBA |
25+23+ |
TO-220F |
15953 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
TOSHIBA |
25+ |
TO-220F |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
TOSHIBA/東芝 |
2447 |
TO-220F |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
TOSHIBA |
23+ |
TO-220屬封 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
TOSHIBA/東芝 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
TOSHIBA/東芝 |
2022+ |
TO-220F |
32500 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
TOSHIBA |
13+ |
TO-220F |
145 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) |
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