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          首頁 >TK3R2A10PL>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          TK3R2A10PL

          High-Efficiency DC-DC Converters

          Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 m? (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5

          文件:728.52 Kbytes 頁數(shù):9 Pages

          TOSHIBA

          東芝

          TK3R2A10PL

          絲?。?a target="_blank" title="Marking" href="/k3r2a10pl/marking.html">K3R2A10PL;Package:TO-220SIS;MOSFETs Silicon N-channel MOS

          1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS

          文件:626.49 Kbytes 頁數(shù):9 Pages

          TOSHIBA

          東芝

          TK3R2A10PL_V01

          MOSFETs Silicon N-channel MOS

          1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS

          文件:626.49 Kbytes 頁數(shù):9 Pages

          TOSHIBA

          東芝

          TK3R2A10PL

          Power MOSFET (N-ch single 60V VDSS 150V)

          Application Scope:High efficiency DC/DC converters / Motor drivers / Switching regulators\nPolarity:N-ch\nGeneration:U-MOSⅨ-H\nRoHS Compatible Product(s) (#):Available\nAssembly bases:中國 Drain current ID 106 A \nPower Dissipation PD 54 W \nDrain-Source voltage VDSS 100 V ;

          Toshiba

          東芝

          技術(shù)參數(shù)

          • Polarity:

            N-ch

          • VDSS(V):

            100

          • VGSS(V):

            +/-20

          • ID(A):

            106

          • PD(W):

            54

          • Ciss(pF):

            9500

          • Qg(nC):

            161

          • =4.5V:

            0.0043

          • =10V:

            0.0032

          • Number of pins:

            3

          • Surface mount package:

            N

          • Package name(Toshiba):

            TO-220SIS

          • Generation:

            U-MOSⅨ-H

          • Type:

            High-speed switching

          • Width×Length×Height(mm):

            10.0 x 15.0 x 4.5

          • Package Size(mm^2):

            150.00

          • Drive voltage type:

            Logic-Level Gate Drive

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