絲?。?strong>TK3R1P04PL；Package：DPAK；MOSFETs Silicon N-channel MOS

1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 19 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS =

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絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

? DESCRITION ? Switching Voltage Regulators ? FEATURES ? Low drain-source on-resistance: RDS(ON) = 3.1m? (MAX) (VGS = 10 V) ? Enhancement mode: Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliab

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High-Efficiency DC-DC Conve

Features (1) High-speed switching (2) Small gate charge: QSW = 19 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 m? (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V

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MOSFETs Silicon N-channel MOS

1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 19 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS =

文件：501.63 Kbytes 頁數(shù)：9 Pages

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Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：High efficiency DC/DC converters / Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅨ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中國\n Drain current ID 130 A \nPower Dissipation PD 87 W \nDrain-Source voltage VDSS 40 V \n;

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