| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/tk31v60x/marking.html">TK31V60X；Package：DFN8x8；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 文件：236.04 Kbytes 頁(yè)數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/k31z60x/marking.html">K31Z60X；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 文件：275.54 Kbytes 頁(yè)數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
MOSFETs Silicon N-channel MOS (U-MOS??H) 1. Applications ? Automotive ? Motor Drivers ? Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS 文件：447.84 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
MOSFETs Silicon N-channel MOS (U-MOS-H) 1. Applications ? Automotive ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS 文件：281.32 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 33A@ TC= 25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 9.7mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive · Switching Voltage Regulators 文件：277.46 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
絲印：K35A65W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.068 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 2.1 mA) 文件：232.23 Kbytes 頁(yè)數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/k35a65w5/marking.html">K35A65W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 130 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.08 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 1 文件：234.81 Kbytes 頁(yè)數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/k35n65w/marking.html">K35N65W；Package：TO-247；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.068 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 2.1 mA) 文件：241.14 Kbytes 頁(yè)數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲印：K35N65W5；Package：TO-247；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 130 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.08 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 文件：243.77 Kbytes 頁(yè)數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Phase Control Thyristor FEATURES ■ High Surge Capability APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control ■ Welding ■ Battery Chargers 文件：177.82 Kbytes 頁(yè)數(shù)：8 Pages | DYNEX | DYNEX |
技術(shù)參數(shù)
- Polarity：
N-ch
- VDSS(V)：
600
- VGSS(V)：
+/-30
- ID(A)：
2.5
- PD(W)：
30
- Ciss(pF)：
380
- Qg(nC)：
9.0
- =10V：
2.8
- Number of pins：
3
- Surface mount package：
N
- Package name(Toshiba)：
TO-220SIS
- Generation：
π-MOSⅦ
- Width×Length×Height(mm)：
10.0 x 15.0 x 4.5
- Package Size(mm^2)：
150.00
- Drive voltage type：
10V Gate Drive
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/東芝 |
25+ |
TO-220F |
45000 |
TOSHIBA/東芝全新現(xiàn)貨TK3A60DA即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有排單訂 |
詢價(jià) | ||
TOSHIBA |
11+ |
TO-220F |
8000 |
全新原裝,絕對(duì)正品現(xiàn)貨供應(yīng) |
詢價(jià) | ||
TOSHIBA |
23+ |
TO-220F |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢價(jià) | ||
TOSHIBA |
25+23+ |
TO-220F |
15953 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
TOSHIBA |
25+ |
TO-220F |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
TOSHIBA/東芝 |
2447 |
TO-220F |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
TOSHIBA |
23+ |
TO-220屬封 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
TOSHIBA/東芝 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
TOSHIBA/東芝 |
2022+ |
TO-220F |
32500 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
TOSHIBA |
13+ |
TO-220F |
145 |
一級(jí)代理,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) |
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