High-Efficiency DC-DC Converters

Features (1) High-speed switching (2) Small gate charge: QSW = 21 nC (typ.) (3) Small output charge: Qoss = 66 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.4 m? (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V

文件：471.28 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=100A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.2Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.93 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：High efficiency DC/DC converters / Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅨ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中國 Drain current ID 160 A \nPower Dissipation PD 168 W \nDrain-Source voltage VDSS 60 V ;

Toshiba

東芝

TO-247

TOSHIBA/東芝

上傳：深圳龐田科技有限公司

TO-220F

TOSHIBA

東芝

上傳：深圳市振宏微科技有限公司