| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Field Effect Transistor Silicon N Channel MOS Type Switching Regulator Applications ● Low drain-source ON-resistance: RDS (ON) = 19 m? (typ.) ● High forward transfer admittance: |Yfs| = 34 S (typ.) ● Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) ● Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) 文件：658.1 Kbytes 頁數(shù)：6 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 文件：1.58274 Mbytes 頁數(shù)：73 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Switching Voltage Regulators MOSFETs Silicon N-channel MOS (U-MOS-H) Features (1) Low drain-source on-resistance: RDS(ON)= 12.2 m?(typ.) (VGS= 10 V) (2) Low leakage current: IDSS= 10 μA (max) (VDS= 60 V) (3) Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 0.2 mA) Applications ? Switching Voltage Regulators 文件：242.36 Kbytes 頁數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 ? (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) Applications ? Switching Voltage Regulators 文件：256.089 Kbytes 頁數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲印：TK31E60X；Package：TO-220；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 文件：246.14 Kbytes 頁數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/k31j60w5/marking.html">K31J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3.0 to 4.5 V (VDS 文件：237.66 Kbytes 頁數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/k31n60w5/marking.html">K31N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS 文件：239.19 Kbytes 頁數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲印：K31N60X；Package：TO-247；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 文件：243.86 Kbytes 頁數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/tk31v60w/marking.html">TK31V60W；Package：DFN8x8；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 文件：235.92 Kbytes 頁數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/tk31v60w5/marking.html">TK31V60W5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA) 文件：273.86 Kbytes 頁數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA |
技術(shù)參數(shù)
- Polarity：
N-ch
- VDSS(V)：
600
- VGSS(V)：
+/-30
- ID(A)：
2.5
- PD(W)：
30
- Ciss(pF)：
380
- Qg(nC)：
9.0
- =10V：
2.8
- Number of pins：
3
- Surface mount package：
N
- Package name(Toshiba)：
TO-220SIS
- Generation：
π-MOSⅦ
- Width×Length×Height(mm)：
10.0 x 15.0 x 4.5
- Package Size(mm^2)：
150.00
- Drive voltage type：
10V Gate Drive
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/東芝 |
25+ |
TO-220F |
45000 |
TOSHIBA/東芝全新現(xiàn)貨TK3A60DA即刻詢購立享優(yōu)惠#長期有排單訂 |
詢價 | ||
TOSHIBA |
11+ |
TO-220F |
8000 |
全新原裝,絕對正品現(xiàn)貨供應(yīng) |
詢價 | ||
TOSHIBA |
23+ |
TO-220F |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
TOSHIBA |
25+23+ |
TO-220F |
15953 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
TOSHIBA |
25+ |
TO-220F |
30000 |
代理全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
TOSHIBA/東芝 |
2447 |
TO-220F |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
TOSHIBA |
23+ |
TO-220屬封 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
TOSHIBA/東芝 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
TOSHIBA/東芝 |
2022+ |
TO-220F |
32500 |
原廠代理 終端免費(fèi)提供樣品 |
詢價 | ||
TOSHIBA |
13+ |
TO-220F |
145 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 |
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