N-CHANNEL 600V - 4ohm - 2.2A TO-220/TO-220FP PowerMesh??I MOSFET

? TYPICAL RDS(on) = 4 ? ? EXTREMELY HIGH dv/dt CAPABILITY ? 100 AVALANCHE TESTED ? NEW HIGH VOLTAGE BENCHMARK ? GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout re finements introduced greatly improve

文件：328.04 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 600V - 4ohm - 2.2A TO-220/TO-220FP PowerMesh??I MOSFET

? TYPICAL RDS(on) = 4 ? ? EXTREMELY HIGH dv/dt CAPABILITY ? 100 AVALANCHE TESTED ? NEW HIGH VOLTAGE BENCHMARK ? GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout re finements introduced greatly improve

文件：328.04 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 1050V(Min) · Static Drain-Source On-Resistance -RDS(on) = 8Ω(Max)@VGS= 10V APPLICATIONS · Switching

文件：397.64 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.32 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 3.2? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER REGULATORS, CONVERTERS

文件：199.7 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.33 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 3.2? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER REGULATORS, CONVERTERS

文件：199.7 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 620V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.19 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET

Description These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rende

文件：1.26101 Mbytes 頁數(shù)：25 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.4 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電