絲?。?a target="_blank" title="Marking" href="/25n60m2ep/marking.html">25N60M2EP；Package：TO-220；N-channel 600 V, 0.175 廓 typ., 18 A MDmesh??M2 EP Power MOSFET in a TO-220 package

Description This device is an N-channel Power MOSFET developed using MDmesh? M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching loss

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.17Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.1 Kbytes 頁數(shù)：2 Pages

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絲?。?a target="_blank" title="Marking" href="/260n4f7/marking.html">260N4F7；Package：TO-220；N-channel 40 V, 1.8 mΩ typ., 120 A STripFET? F7 Power MOSFET in a TO-220 package

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trenc

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.9 Kbytes 頁數(shù)：2 Pages

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N-channel 600 V, 0.14 Ω typ., 20 A MDmeshTM M2 Power MOSFETs in TO-220 and TO-247 packages

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? 100 avalanche tested ? Zener-protected Description These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, these de

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N-channel 650 V, 0.156 Ω typ., 20 A, MDmeshTM DM2 Power MOSFET in a TO-220 package

Features ? Fast-recovery body diode ? Extremely low gate charge and input capacitance ? Low on-resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh? DM2 fastrecovery diode series.

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N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

文件：1.14259 Mbytes 頁數(shù)：23 Pages

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N-channel 600 V, 0.135 廓 typ., 20 A MDmesh??II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

文件：1.12508 Mbytes 頁數(shù)：24 Pages

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Low input capacitance and gate charge

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.35849 Mbytes 頁數(shù)：23 Pages

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