isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 8.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.31 Kbytes 頁數(shù)：2 Pages

ISC

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N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout re finements introduced greatly improve the Ron* area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate harge and ruggedness. ■ TYPICAL RD

文件：334.56 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 8.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.24 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout re finements introduced greatly improve the Ron* area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate harge and ruggedness. ■ TYPICAL RD

文件：334.56 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

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N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH??II MOSFET

DESCRIPTION The third generation of MESH OVERLAY? Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件：634.24 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH??II MOSFET

DESCRIPTION The third generation of MESH OVERLAY? Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件：634.24 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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N-channel 1000 V, 6.25 廓, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH??Power MOSFET

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure a h

文件：459.31 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 8.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.48 Kbytes 頁數(shù)：2 Pages

ISC

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N-CHANNEL 900V-5W-2.1A TO-220/DPAK/IPAK Zener-Protected SuperMESHTM MOSFET

Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：389.99 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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N-channel 60 V, 3 m廓, 120 A D2PAK, TO-220, I2PAK STripFET??Power MOSFET

文件：858.28 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體