isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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N-CHANNEL 40V - 2.1m-ohm - 160A - TO-220 - D-2PAK - I-2PAK STripFET-TM Power MOSFET

Description This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size?“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing dens

文件：268.25 Kbytes 頁(yè)數(shù)：14 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.08 Kbytes 頁(yè)數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 180A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.19 Kbytes 頁(yè)數(shù)：2 Pages

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N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 27A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

文件：396.22 Kbytes 頁(yè)數(shù)：2 Pages

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Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency

文件：1.12074 Mbytes 頁(yè)數(shù)：21 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.135 Ω typ., 22 A MDmesh? M2 Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? 100% avalanche tested ? Zener-protected Applications ? Switching applications ? LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh? M

文件：1.11956 Mbytes 頁(yè)數(shù)：21 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.84 Kbytes 頁(yè)數(shù)：2 Pages

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N-channel Power MOSFETs developed using the second generation of MDmesh

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：966.35 Kbytes 頁(yè)數(shù)：21 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/28nm60nd/marking.html">28NM60ND；Package：TO-220；N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D?PAK, TO-220FP, TO-220 and TO-247 packages

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.67094 Mbytes 頁(yè)數(shù)：22 Pages

STMICROELECTRONICS

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