isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.33 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 3.2? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER REGULATORS, CONVERTERS

文件：199.7 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導體

2A, 600V NChannel MOSFET

GENERAL DESCRIPTION SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary SRin? structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to mini

文件：385.77 Kbytes 頁數(shù)：6 Pages

SILAN

士蘭微

N-Channel MOSFET uses advanced trench technology

文件：1.7999 Mbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

N-Channel 650 V (D-S) MOSFET

文件：1.08793 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體