isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.085Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.56 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N - CHANNEL 100V - 0.07 ohm - 22A TO-220 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：83.05 Kbytes 頁(yè)數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.88 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-CHANNEL 30V - 0.038ohm - 22A TO-220 STripFET??POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：239.62 Kbytes 頁(yè)數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.215Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.6 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh??ower MOSFET

DESCRIPTION The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

文件：356.23 Kbytes 頁(yè)數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh??ower MOSFET

DESCRIPTION The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

文件：356.23 Kbytes 頁(yè)數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh??ower MOSFET

DESCRIPTION This improved version of MDmesh? which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s propr

文件：386.59 Kbytes 頁(yè)數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.98 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-channel 600 V, 0.2 廓, 16 A MDmesh??II Power MOSFET

Description These devices are made using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

文件：994.47 Kbytes 頁(yè)數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體