Isc N-Channel MOSFET Transistor

? FEATURES ? Low input capacitance and gate charge ? Low gate input resistances ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

文件：316.99 Kbytes 頁數(shù)：2 Pages

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N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

文件：449.47 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

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P-Channel 20-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch ? PA Switch ? DC/DC Converters

文件：471.29 Kbytes 頁數(shù)：9 Pages

VBSEMI

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P-Channel 20-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch ? PA Switch ? DC/DC Converters

文件：472.17 Kbytes 頁數(shù)：9 Pages

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絲?。?a target="_blank" title="Marking" href="/23n80k5/marking.html">23N80K5；Package：TO-220；N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-220 package

Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high e

文件：722.43 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.53 Kbytes 頁數(shù)：2 Pages

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絲?。?a target="_blank" title="Marking" href="/24n60dm2/marking.html">24N60DM2；Package：TO-220；N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

Description These FDmesh II Plus? low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the world

文件：1.20083 Mbytes 頁數(shù)：21 Pages

STMICROELECTRONICS

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N-channel 600 V, 162 m typ., 17 A, MDmesh? M6 Power MOSFET in a TO-220 package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：268.04 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.97 Kbytes 頁數(shù)：2 Pages

ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 26A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 60mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.52 Kbytes 頁數(shù)：2 Pages

ISC

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