| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs Features ? High voltage rail up to 1200 V ? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V ? dV/dt transient immunity ±100 V/ns ? Input-output propagation delay: 45 ns ? Separate sink and source option for easy gate driving configuration ? UVLO function optimized for GaN 文件：551.02 Kbytes 頁數(shù)：20 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：GAP2GS；Package：SO-8；Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs Features ? High voltage rail up to 1200 V ? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V ? dV/dt transient immunity ±100 V/ns ? Input-output propagation delay: 45 ns ? Separate sink and source option for easy gate driving configuration ? UVLO function optimized for GaN 文件：551.02 Kbytes 頁數(shù)：20 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/gap2gs/marking.html">GAP2GS；Package：SO-8；Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs Features ? High voltage rail up to 1200 V ? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V ? dV/dt transient immunity ±100 V/ns ? Input-output propagation delay: 45 ns ? Separate sink and source option for easy gate driving configuration ? UVLO function optimized for GaN 文件：551.02 Kbytes 頁數(shù)：20 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Isolated 3 A single gate driver for Enhancement mode GaN FETs Features ? High voltage rail up to 1700 V ? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V ? dV/dt transient immunity ±100 V/ns ? Input-output propagation delay: 45 ns ? Separate sink and source option for easy gate driving configuration ? UVLO function optimized for GaN 文件：556.07 Kbytes 頁數(shù)：20 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/gap2gsn/marking.html">GAP2GSN；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs Features ? High voltage rail up to 1700 V ? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V ? dV/dt transient immunity ±100 V/ns ? Input-output propagation delay: 45 ns ? Separate sink and source option for easy gate driving configuration ? UVLO function optimized for GaN 文件：556.07 Kbytes 頁數(shù)：20 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/gap2gsn/marking.html">GAP2GSN；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs Features ? High voltage rail up to 1700 V ? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V ? dV/dt transient immunity ±100 V/ns ? Input-output propagation delay: 45 ns ? Separate sink and source option for easy gate driving configuration ? UVLO function optimized for GaN 文件：556.07 Kbytes 頁數(shù)：20 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Galvanically isolated 4 A dual gate driver Features ? High voltage rail up to 1200 V ? Driver current capability: 4 A sink/source @ 25 °C ? dV/dt transient immunity ±100 V/ns ? Overall input-output propagation delay: 75 ns ? Separate sink and source option for easy gate driving configuration ? 4 A Miller CLAMP ? UVLO function ? Con 文件：803.17 Kbytes 頁數(shù)：24 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：GAP2HDM；Package：SO-36W；Galvanically isolated 4 A dual gate driver Features ? High voltage rail up to 1200 V ? Driver current capability: 4 A sink/source @ 25 °C ? dV/dt transient immunity ±100 V/ns ? Overall input-output propagation delay: 75 ns ? Separate sink and source option for easy gate driving configuration ? 4 A Miller CLAMP ? UVLO function ? Con 文件：803.17 Kbytes 頁數(shù)：24 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/gap2hdm/marking.html">GAP2HDM；Package：SO-36W；Galvanically isolated 4 A dual gate driver Features ? High voltage rail up to 1200 V ? Driver current capability: 4 A sink/source @ 25 °C ? dV/dt transient immunity ±100 V/ns ? Overall input-output propagation delay: 75 ns ? Separate sink and source option for easy gate driving configuration ? 4 A Miller CLAMP ? UVLO function ? Con 文件：803.17 Kbytes 頁數(shù)：24 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Galvanically isolated 4 A single gate driver Features ? High voltage rail up to 1200 V ? Driver current capability: 4 A sink/source @25°C ? dV/dt transient immunity ±100 V/ns in full temperature range ? Overall input-output propagation delay: 75 ns ? Separate sink and source option for easy gate driving configuration ? 4 A Miller CLAMP 文件：453.12 Kbytes 頁數(shù)：22 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號：
STG
- 制造商：
SAMHOP
- 制造商全稱：
SAMHOP
- 功能描述：
Dual N-Channel E nhancement Mode F ield E ffect Transistor
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SAMHOP |
2024+ |
TSSOP8 |
50000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
STG |
25+ |
MSOP8 |
5000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
SAMHOP |
17+ |
MSOP-8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
SAMHOP |
23+ |
TSSOP8 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
SAMHOP |
2016+ |
TSSOP8 |
670 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
SAMHOP |
23+ |
TSSOP8 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
SAMHOP |
19+ |
TSSOP8 |
8650 |
原裝正品,現(xiàn)貨熱賣 |
詢價(jià) | ||
SAMHOP |
20+ |
TSSOP8 |
2960 |
誠信交易大量庫存現(xiàn)貨 |
詢價(jià) | ||
SAMHOP |
25+ |
TSSOP8 |
15000 |
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢 |
詢價(jià) | ||
SAMHOP |
25+ |
TSSOP8 |
100 |
普通 |
詢價(jià) |
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