EAS 180 mJ - 400 V - internally clamped IGBT

Description This application-specific IGBT utilizes the most advanced PowerMESH? technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot

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絲?。?a target="_blank" title="Marking" href="/gb18n40lz/marking.html">GB18N40LZ；Package：D2PAK；Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.

文件：575.8 Kbytes 頁數(shù)：16 Pages

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19 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ High frequency operation Applications ■ High frequency motor drives ■ SMPS and PFC i

文件：663.63 Kbytes 頁數(shù)：15 Pages

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絲印：GB19NC60H；Package：D2PAK；19 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ High frequency operation Applications ■ High frequency motor drives ■ SMPS and PFC i

文件：663.63 Kbytes 頁數(shù)：15 Pages

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20 A, 600 V fast IGBT

Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Very low on-voltage drop (VCE(sat)) ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium

文件：423.41 Kbytes 頁數(shù)：15 Pages

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絲?。?a target="_blank" title="Marking" href="/gb19nc60s/marking.html">GB19NC60S；Package：D2PAK；20 A, 600 V fast IGBT

Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Very low on-voltage drop (VCE(sat)) ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium

文件：423.41 Kbytes 頁數(shù)：15 Pages

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N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter

文件：494.28 Kbytes 頁數(shù)：11 Pages

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N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter

文件：494.28 Kbytes 頁數(shù)：11 Pages

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N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter

文件：494.28 Kbytes 頁數(shù)：11 Pages

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N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter

文件：50.67 Kbytes 頁數(shù)：6 Pages

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