600 V - 10 A - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov

文件：771.12 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：GB10NC60HD；Package：D2PAK；600 V - 10 A - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov

文件：771.12 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications wit

文件：379.54 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications wit

文件：379.54 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gb10nc60kd/marking.html">GB10NC60KD；Package：D2PAK；10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ? Lowe

文件：1.6576 Mbytes 頁數(shù)：30 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gb15h60df/marking.html">GB15H60DF；Package：D2PAK；Trench gate field-stop IGBT, H series 600 V, 15 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.86596 Mbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g15m65df2/marking.html">G15M65DF2；Package：D2PAK；Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D2PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.11098 Mbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D2PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.11098 Mbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

EAS 180 mJ - 400 V - internally clamped IGBT

Description This application-specific IGBT utilizes the most advanced PowerMESH? technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot

文件：632.91 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

EAS 180 mJ - 400 V - internally clamped IGBT

Description This application-specific IGBT utilizes the most advanced PowerMESH? technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot

文件：632.91 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體