Low voltage dual SPDT switch with negative rail capability

Features ■ Distortion-free negative signal throughput down to VCC - 5.5 V ■ Wide operating voltage range: VCC (opr) = 1.65 to 4.5 V single supply ■ Ultra low power dissipation: ICC = 0.2 μA (max.) at TA = 85 °C ■ Low ON resistance: RON = 0.5 Ω (max. TA = 25 °C) at VCC = 3.6 V ■ 4.3 V tole

文件：588.73 Kbytes 頁數(shù)：23 Pages

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Low voltage dual SPDT switch with negative rail capability

Features ■ Distortion-free negative signal throughput down to VCC - 5.5 V ■ Wide operating voltage range: VCC (opr) = 1.65 to 4.5 V single supply ■ Ultra low power dissipation: ICC = 0.2 μA (max.) at TA = 85 °C ■ Low ON resistance: RON = 0.5 Ω (max. TA = 25 °C) at VCC = 3.6 V ■ 4.3 V tole

文件：588.73 Kbytes 頁數(shù)：23 Pages

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Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing

Features ? Maximum junction temperature: TJ = 175 °C ? High speed switching series ? Minimized tail current ? Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A ? Safe paralleling ? Tight parameter distribution Applications ? Solar ? Welding ? High frequency converter

文件：428.48 Kbytes 頁數(shù)：10 Pages

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LOW VOLTAGE 4ohm SPDT SWITCH

DESCRIPTION The STG719 is an high speed SPDT CMOS SWITCH frabricated in silicon gate C2MOS technology. It is designed to operate from 1.8V to 5.5V, making this device ideal for portable applications. It offers 4? ON-Resistance Max at 5V 25°C. Additional key features are fast switching speed (tON=

文件：60.74 Kbytes 頁數(shù)：7 Pages

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LOW VOLTAGE 4ohm SPDT SWITCH

DESCRIPTION The STG719 is an high speed SPDT CMOS SWITCH frabricated in silicon gate C2MOS technology. It is designed to operate from 1.8V to 5.5V, making this device ideal for portable applications. It offers 4? ON-Resistance Max at 5V 25°C. Additional key features are fast switching speed (tON=

文件：60.74 Kbytes 頁數(shù)：7 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

Surface Mount Package. FEATURES Super high dense cell design for low RDS (ON). Rugged and reliable.

文件：742.94 Kbytes 頁數(shù)：7 Pages

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Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：197.75 Kbytes 頁數(shù)：7 Pages

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Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

文件：650.01 Kbytes 頁數(shù)：7 Pages

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Dual N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

文件：700.09 Kbytes 頁數(shù)：7 Pages

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Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

文件：628.23 Kbytes 頁數(shù)：8 Pages

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