Isolated 3 A single gate driver for Enhancement mode GaN FETs

Features ? High voltage rail up to 1700 V ? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V ? dV/dt transient immunity ±100 V/ns ? Input-output propagation delay: 45 ns ? Separate sink and source option for easy gate driving configuration ? UVLO function optimized for GaN

文件：556.07 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/gap2gsn/marking.html">GAP2GSN；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs

Features ? High voltage rail up to 1700 V ? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V ? dV/dt transient immunity ±100 V/ns ? Input-output propagation delay: 45 ns ? Separate sink and source option for easy gate driving configuration ? UVLO function optimized for GaN

文件：556.07 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gap2gsn/marking.html">GAP2GSN；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs

Features ? High voltage rail up to 1700 V ? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V ? dV/dt transient immunity ±100 V/ns ? Input-output propagation delay: 45 ns ? Separate sink and source option for easy gate driving configuration ? UVLO function optimized for GaN

文件：556.07 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Isolated 3 A single gate driver for Enhancement mode GaN FETs

The STGAP2GSN is a single gate driver which provides isolation between the gate driving channel and the low voltage control and interface circuitry.\n\n The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and high p ? High voltage rail up to 1700 V \n? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V \n? dV/dt transient immunity ±100 V/ns \n? Input-output propagation delay: 45 ns \n? Separate sink and source option for easy gate driving configuration \n? UVLO function optimized for GaN? Gate dr;

ST

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